Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same

ABSTRACT

Disclosed are a light-emitting device package, a manufacturing method therefor, and a vehicle lamp and a backlight unit including the same. The light-emitting device package includes: a light-emitting chip having electrode pads positioned at a lower part thereof; a wavelength conversion unit for covering at least an upper surface and lateral surfaces of the light-emitting chip; and a reflective part which covers the lateral surfaces of the light-emitting chip. Accordingly, the light-emitting device package can be miniaturized and a separate substrate for forming a lens is not required.

CROSS REFERENCE TO RELATED APPLICATION

This patent document is a continuation of U.S. patent application Ser.No. 14/891,304 filed on Feb. 16, 2016, which is a 35 U.S.C. § 371National Stage application of PCT Application No. PCT/KR2014/004284,filed on May 13, 2014, which further claims the benefits and prioritiesof Korean Patent Application No. 10-2013-0147684, filed on Nov. 29,2013, Korean Patent Application No. 10-2013-0094299, filed on Aug. 8,2013, and Korean Patent Application No. 10-2013-0053633, filed on May13, 2013. The entire disclosures of the above applications areincorporated by reference herein their entireties.

TECHNICAL FIELD

The present invention relates to a light emitting device package, amanufacturing method thereof, and a vehicle lamp and a backlight unitincluding the same, and more particularly, to a small light emittingdevice package, a method of manufacturing a wafer-level light emittingdevice package, and a vehicle lamp and a backlight unit including thesame.

BACKGROUND ART

A light emitting diode is an inorganic semiconductor device capable ofemitting light through recombination of electrons and holes and is usedin various fields including displays, vehicle lamps, general lighting,and the like. A light emitting diode has various merits such as longlifespan, low power consumption and rapid response, and a light emittingdevice package including such a light emitting diode is expected toreplace conventional light sources. Due to various merits of the lightemitting diode, the light emitting device package is applied to variousfields, for example, a vehicle lamp and a backlight unit.

A typical light emitting device package generally includes a substrate,a light emitting chip mounted on the substrate, an encapsulationmaterial encapsulating the light emitting chip, a housing supporting theencapsulation material, and a lens disposed on the light emitting chip.However, the typical light emitting device package requires a separatepackaging process independent of a process of manufacturing a lightemitting chip, thereby causing complication of the manufacturing processwhile increasing manufacturing costs. Moreover, since such a lightemitting device package requires a substrate for mounting the lightemitting chip, there is a limit in miniaturization of the package.

In order to simplify the process of manufacturing such a light emittingdevice package, a wafer level process is disclosed in Korean PatentPublication No. 10-2012-0119350 A and the like. Korean PatentPublication No. 10-2012-0119350 A discloses a method of manufacturing alight emitting device module, in which a light emitting device isdirectly mounted on a substrate and a lens surrounding the lightemitting device is directly mounted on the substrate, thereby minimizingand simplifying the manufacturing process.

However, the light emitting device module disclosed in the publicationrequires the substrate for forming the lens. Thus, in order tomanufacture a light emitting apparatus like the light emitting devicemodule, it is necessary to provide a packaging process for mounting thelight emitting device on the substrate, and the light emitting devicemust include a secondary substrate in addition to a growth substrate.Such a typical light emitting apparatus cannot be regarded as a waferlevel package, which does not employ other substrates except the growthsubstrate, and has a limit in miniaturization.

In addition, when a light emitting diode is applied to a vehicle lampand a backlight unit, a light emitting device package including such alight emitting diode can suffer from a problem of light leakage. As usedherein, light leakage means leakage of light through a side surface ofthe light emitting device package. That is, light leakage means thatlight leaks through other regions of the light emitting device packagesuch as the side surface thereof instead of illuminating a region infront of the light emitting device package.

When light leakage occurs from the light emitting device package in thevehicle lamp, a cutoff line corresponding to a border line between abright section and a dark section generated upon illumination of aregion in front of the vehicle lamp with light emitted from the vehiclelamp becomes unclear. As a result, an undesired region is illuminatedupon driving of a vehicle, causing hindrance of sight of other drivers,and the light emitting device package suffers from light loss due tolight leakage through the side surface thereof.

In addition, when light leakage occurs from the light emitting devicepackage in the backlight unit, an outer periphery of a display becomesbrighter than a central region thereof or spots can be generated overthe display screen. In some cases, the display can suffer fromdeterioration in contrast ratio and reduction of viewing angle.Moreover, the display can suffer from color deviation, thereby causingdeterioration of image quality.

Korean Patent No. 10-0519592 (Registration Date: Sep. 29, 2005)discloses a light emitting diode display capable of preventing lightleakage. The light emitting diode display includes a light emittingdiode (LED) chip and a reflector, on which a light absorption sheet anda light absorption layer are disposed to absorb light scattered at anedge of an upper surface of the reflector. This light emitting diodedisplay prevents light leakage by guiding light emitted from the lightemitting diode chip to meet a structure for prevention of light leakageafter traveling through air. Thus, this light emitting diode display hasa large volume and allows a limited number of light emitting diodes(LEDs) to be mounted on a printed circuit board. Moreover, a secondarysubstrate must be provided together with a growth substrate to a lightemitting device, thereby causing a limit in miniaturization of the lightemitting device.

PRIOR LITERATURE

(Patent Document 1) Korean Patent Publication No. 10-2012-0119350 A

(Patent Document 2) Korean Patent No. 10-0519592

DISCLOSURE Technical Problem

One technical object of the present invention provides methods formanufacturing an ultraminiature light emitting device package and awafer level package not including a secondary substrate excluding agrowth substrate.

Another technical aspect of the present invention provides a lightemitting device package that can prevent light leakage and lateral lightleakage.

Another technical object of the present invention provides a vehiclelamp that can emit light providing a clear cutoff line.

Another technical object of the present invention provides a backlightunit that can improve image quality of a display by solving a problem ofcolor deviation, and can improve contrast ratio and viewing angle of thedisplay.

Technical Solution

In accordance with one exemplary embodiment of the present invention, alight emitting device package includes: a light emitting chip includingelectrode pads disposed on a lower side thereof; a wavelength conversionunit covering at least upper and side surfaces of the light emittingchip; and a reflective unit covering the side surface of the lightemitting chip, wherein the light emitting chip includes a secondconductivity-type semiconductor layer, an active layer disposed on thesecond conductivity-type semiconductor layer, a first conductivity-typesemiconductor layer disposed on the active layer, and a substratedisposed on the first conductivity-type semiconductor layer.

According to the present invention, the light emitting device packagedoes not include a separate secondary substrate and thus can beminiaturized.

The wavelength conversion unit may be interposed between the sidesurface of the light emitting chip and the reflective unit.

An upper surface of the wavelength conversion unit may have the sameheight as an upper surface of the reflective unit.

The wavelength conversion unit may include a phosphor and a resin, andmay include a side surface subjected to plasma treatment.

The light emitting chip may include a plurality of mesas separated fromeach other on the first conductivity-type semiconductor layer and eachincluding the active layer and the second conductivity-typesemiconductor layer; reflective electrodes disposed on the plurality ofmesas, respectively, and forming ohmic contact with the secondconductivity-type semiconductor layer; and a current spreading layercovering the plurality of mesas and the first conductivity-typesemiconductor layer and including openings respectively disposed withinupper regions of the mesas and exposing the reflective electrodes, thecurrent spreading layer forming ohmic contact with the firstconductivity-type semiconductor layer while being insulated from theplurality of mesas.

The plurality of mesas may have an elongated shape and extend parallelto each other in one direction, and the openings of the currentspreading layer may be disposed biased to the same ends of the pluralityof mesas.

The electrode pads may include a first pad and a second pad; the lightemitting chip may further include an upper insulation layer covering atleast a portion of the current spreading layer and including openingsexposing the reflective electrodes; the first pad may be electricallyconnected to the current spreading layer; and the second pad may beelectrically connected to the reflective electrodes exposed through theopenings.

The light emitting device package may further include a lens disposed onthe light emitting chip.

The light emitting device package may further include a light blockingunit at least partially covering a side surface of the reflective unit.

In accordance with another exemplary embodiment of the presentinvention, a light emitting device package includes: a unit lightemitting device; and a light blocking unit covering at least one sidesurface of the unit light emitting device, wherein the unit lightemitting device includes a light emitting chip having an upper surface,a side surface and a lower surface; a wavelength conversion unitcovering the upper surface of the light emitting chip; and a reflectiveunit covering the side surface of the light emitting chip, and the lightemitting chip includes electrode pads disposed on the lower surfacethereof and exposed outside.

The light blocking unit may block light emitted to a side surface of thereflective unit, thereby preventing light leakage of the light emittingdevice.

The light emitting device package may further include a wavelengthconversion unit covering the side surface of the light emitting chip,and the wavelength conversion unit covering the side surface of thelight emitting chip may be disposed between the reflective unit and thelight emitting chip.

The wavelength conversion unit may include a phosphor and a resin, andmay include a side surface subjected to plasma treatment.

The light blocking unit includes a light absorption material capable ofabsorbing light better than the reflective unit, and the lightabsorption material may include carbon black, a black resin, and a blackpaint.

An upper surface of the light blocking unit may have the same height asor a higher height than an upper surface of the reflective unit.

The light emitting device package may further include at least one unitlight emitting device and the light blocking unit may cover at least oneside surface of the at least one unit light emitting device.

At least one side surface of one unit light emitting device may adjoinat least one side surface of another unit light emitting device.

A portion of the light blocking unit may be disposed between the unitlight emitting device and the at least one unit light emitting device.

The at least one unit light emitting device may further include awavelength conversion unit covering a side surface of the light emittingchip, and the wavelength conversion unit covering the side surface maybe disposed between the reflective unit of the at least one unit lightemitting device and the light emitting chip.

An upper surface of the wavelength conversion unit may have the sameheight as an upper surface of the reflective unit.

An upper surface of the reflective unit may have the same height as anupper surface of the light blocking unit.

The light emitting device package may further include a lens disposed onthe light emitting chip.

In accordance with a further exemplary embodiment of the presentinvention, a vehicle lamp includes the light emitting device package asset forth above.

In accordance with yet another exemplary embodiment of the presentinvention, a backlight unit includes a printed circuit board; the lightemitting device package according to exemplary embodiments as set forthabove; and a lens mounted on the printed circuit board and covering thelight emitting device.

At least a portion of the light blocking unit of the light emittingdevice package may be disposed between a bottom of the lens and theprinted circuit board.

In accordance with yet another exemplary embodiment of the presentinvention, a method for manufacturing a light emitting device packageincludes: arranging light emitting chips on a first support substrate tobe separated from each other, each of the light emitting chips includingelectrode patterns disposed on a lower surface thereof; forming awavelength conversion unit covering an upper surface and a side surfaceof each of the light emitting chips; and forming a reflective unitcovering the side surface of each of the light emitting chips.

The light emitting chips separated from each other may be obtained bydividing the same wafer.

The wavelength conversion unit may be formed to fill a region betweenthe light emitting chips, and the manufacturing method may furtherinclude dividing the wavelength conversion unit in the region betweenthe light emitting chips into first individual light emitting deviceunits after forming the wavelength conversion unit.

The manufacturing method may further include arranging the individuallight emitting device units on a second support substrate to beseparated from each other after dividing the wavelength conversion unitinto the individual light emitting device units.

The reflective unit may be formed to fill a region between the firstindividual light emitting device units.

The manufacturing method may further include dividing the reflectiveunit in the region between the first individual light emitting deviceunits into second individual light emitting device units after formingthe reflective unit.

The manufacturing method may further include performing planarizationwith respect to at least one of an upper surface of the reflective unitand an upper surface of the wavelength conversion unit.

The manufacturing method may further include performing plasma treatmentwith respect to a side surface of the wavelength conversion unit beforeforming the reflective unit.

The manufacturing method may further include forming a lens on each ofthe light emitting chips.

In accordance with yet another exemplary embodiment of the presentinvention, a method for manufacturing a light emitting device packageincludes: preparing a wafer including a plurality of semiconductor stackstructures and electrode patterns disposed on a lower surface thereof;forming a wavelength conversion unit covering an upper surface of thewafer; dividing the wafer to form light emitting chips each having thewavelength conversion unit at an upper portion thereof; arranging thelight emitting chips on a support substrate to be separated from eachother; and forming a reflective unit covering side surfaces of the lightemitting chips and a side surface of the wavelength conversion unit.

Advantageous Effects

According to the present invention, it is possible to provide aminiaturized light emitting device package, which includes a lightemitting chip, a wavelength conversion unit and a reflective unit thatare closely formed to one another and does not include a separatesecondary substrate or a separate lead electrode.

In addition, according to the present invention, it is possible toprovide a method for manufacturing a light emitting device package,which can form a wavelength conversion unit and a reflective unit to beintegrally formed with plurality of light emitting chip at a waferlevel, and can eliminate a separate packaging process. As a result, themethod for manufacturing a light emitting device package can besimplified.

Further, it is possible to provide a miniaturized light emitting devicepackage, which includes a light emitting chip, a wavelength conversionunit, a reflective unit and a light blocking unit that are closelyformed to one another and does not include a separate secondarysubstrate or a separate lead electrode.

Furthermore, the light emitting device package adopts a light blockingunit, thereby preventing light leakage of the light emitting devicepackage. Thus, a vehicle lamp adopting the light emitting device packagecan be operated to illuminate a region intended by a user. That is, itis possible to provide light forming a clear border between a brightsection and a dark section. As a result, it is possible to improvedriver visibility while protecting sight of other drivers. Furthermore,a backlight unit including the light emitting device package accordingto the exemplary embodiments can maximize intensity of light enteringthe lens, thereby improving contrast ratio and viewing angle of adisplay. Furthermore, the backlight unit including the light emittingdevice package according to the exemplary embodiments can solve aproblem of color deviation of a display, thereby improving imagequality.

DESCRIPTION OF DRAWINGS

FIG. 1 is a sectional view of a light emitting device package accordingto one exemplary embodiment.

FIG. 2 is a sectional view of a light emitting device package accordingto another exemplary embodiment.

FIG. 3a and FIG. 3b are a sectional view and a plan view of a lightemitting device package according to a further exemplary embodiment.

FIG. 4 is a sectional view of a light emitting device package accordingto yet another exemplary embodiment.

FIG. 5 is a sectional view of a light emitting device package accordingto yet another exemplary embodiment.

FIG. 6a and FIG. 6b are a sectional view and a plan view of a lightemitting device package and a light emitting chip according to yetanother exemplary embodiment.

FIG. 7a and FIG. 7b show plan views of light emitting device packagesaccording to yet another exemplary embodiment.

FIG. 8a and FIG. 8b show plan views of light emitting device packagesaccording to yet another exemplary embodiment.

FIG. 9a and FIG. 9b are sectional views and plan views of a backlightunit including a light emitting device package according to exemplaryembodiments.

FIG. 10 to FIG. 15 are plan views and a sectional view illustrating amethod for manufacturing a light emitting device package according toone exemplary embodiment.

FIG. 16a and FIG. 16b are plan views illustrating a method formanufacturing a light emitting device package according to anotherexemplary embodiment.

FIG. 17 to FIG. 21 are plan views and a sectional view illustrating amethod for manufacturing a light emitting device package according to afurther exemplary embodiment.

BEST MODE

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings. Thefollowing embodiments are provided by way of example so as to fullyconvey the spirit of the present disclosure to those skilled in the artto which the present disclosure pertains. Accordingly, the presentdisclosure is not limited to the embodiments disclosed herein and canalso be implemented in different forms. In the drawings, widths,lengths, thicknesses, and the like of elements can be exaggerated forclarity and descriptive purposes. When an element or layer is referredto as being “disposed above” or “disposed on” another element or layer,it can be “directly disposed above” or “directly disposed on” the otherelement or layer or intervening elements or layers can be present.Throughout the specification, like reference numerals denote likeelements having the same or similar functions.

FIG. 1 is a sectional view of a light emitting device package 1according to one exemplary embodiment.

Referring to FIG. 1, the light emitting device package 1 includes alight emitting chip 110, a wavelength conversion unit 121, and areflective unit 130. The light emitting device package 1 may furtherinclude a lens 150.

The light emitting chip 110 includes an upper surface, a lower surface,and particularly, electrode pads (not shown) disposed on the lowersurface thereof. With the structure wherein the light emitting chip 110includes the electrode pads on the lower surface thereof, the lightemitting device package 1 does not need a separate electrode and theelectrode pads can act as electrodes of the light emitting devicepackage 1. With this structure, the light emitting device package 1 canbe miniaturized.

The light emitting chip 110 includes the electrode pads on the lowersurface thereof, and may include any type of light emitting diode, forexample, a flip-chip type light emitting diode.

The wavelength conversion unit 121 may cover the upper surface of thelight emitting chip 110 and may further cover a side surface of thelight emitting chip 110. The wavelength conversion unit 121 may have aconstant thickness, or may be formed such that an upper surface of thewavelength conversion unit 121 has a different thickness than a sidesurface thereof. It is possible to adjust color characteristics of lightemitted from the light emitting device package 1 through adjustment ofthe thickness of the wavelength conversion unit 121.

The wavelength conversion unit 121 may include a phosphor and a resin,in which the phosphor may be mixed with the resin to be randomly orevenly dispersed in the resin. The phosphors included in the wavelengthconversion unit 121 can convert light emitted from the light emittingchip 110 into light having different wavelengths than the light from thelight emitting chip 110. Accordingly, the light emitting device package1 can emit various colors and it is possible to realize a white lightemitting device.

The resin may include a polymer resin such as an epoxy resin or an acrylresin, or a silicone resin, and may act as a matrix for dispersing thephosphor therein.

The phosphor can convert light emitted from the light emitting chip 110into light having different wavelengths therefrom through excitation ofthe light. The phosphor may include various phosphors known to a personhaving ordinary knowledge in the art, and may include at least oneamong, for example, garnet phosphors, aluminate phosphors, sulfidephosphors, oxynitride phosphors, nitride phosphors, fluoride phosphors,and silicate phosphors. However, it should be understood that thepresent disclosure is not limited thereto.

On the other hand, characteristics of the light converted by thewavelength conversion unit 121 can be freely regulated by adjusting thephosphor included in the wavelength conversion unit 121, the thicknessof the wavelength conversion unit 121, the resin in the wavelengthconversion unit 121, and the like.

The reflective unit 130 may cover the side surface of the light emittingchip 110 and may further cover the wavelength conversion unit 121 formedon the side surface of the light emitting chip 110. Thus, the wavelengthconversion unit 121 covering the side surface of the light emitting chip110 may be interposed between the light emitting chip 110 and thereflective unit 130.

The reflective unit 130 serves to reflect light. With the structurewherein the reflective unit 130 is formed on the outer peripheral sidesurface of the light emitting device package 1, the light emittingdevice package 1 allows light emitted through the light emitting chip110 and the phosphor to be collected above the light emitting chip.However, it should be understood that the present disclosure is notlimited thereto, and a directional angle of the light emitted from thelight emitting chip 110 can be regulated by adjusting reflectivity andlight transmittance of the reflective unit 130, as needed.

The reflective unit 130 may include a resin and may further includefillers capable of reflecting or scattering light.

The resin may be a transparent or translucent resin, and may include asilicone resin, or a polymer resin such as an epoxy resin, a polyimideresin, a urethane resin, and the like. In this exemplary embodiment, theresin may be a silicone resin.

The fillers may be uniformly dispersed in the resin. The fillers may beselected from any materials capable of reflecting or scattering light,and may include, for example, titanium dioxide (TiO₂), silicon dioxide(SiO₂), zirconium dioxide (ZrO₂), and the like. The reflective unit 130may include at least one of the above fillers. Reflectivity or a degreeof light scattering of the reflective unit 130 can be regulated byadjusting the kind or concentration of fillers.

An upper surface of the reflective unit 130 may have the same height asan upper surface of the wavelength conversion unit 121. That is, asshown in the drawings, the upper surface of the reflective unit 130 maybe flush with the upper surface of the wavelength conversion unit 121.With this structure, the lens 150 can be more stably disposed on thelight emitting chip 110.

Further, the wavelength conversion unit 121 may have a side surfacesubjected to plasma treatment. Accordingly, bonding strength between thewavelength conversion unit 121 and the reflective unit 130 increases,thereby improving stability and reliability of the light emitting devicepackage 1.

The lens 150 may be disposed on the light emitting chip 110. Further, alower surface of the lens 150 has a larger area than the upper surfaceof the wavelength conversion unit 121, whereby the lens 150 can coverthe entirety of the upper surface of the wavelength conversion unit 121.With this structure, the lens 150 allows the light converted by thewavelength conversion unit 121 to be more effectively emitted to theoutside therethrough.

The lens 150 may be a silicone resin and may be formed of any materialwithout limitation. The lens 150 may have a semi-spherical shape asshown in the drawings, or may have other shapes such as a planar shapeand a shape with a concave portion at a center thereof in order toobtain a desired orientation pattern of light.

On the other hand, the lens 150 may be omitted in order to reduce theoverall height of the light emitting device package 1.

As described above, the light emitting device package 1 does not includea separate secondary substrate or a separate lead electrode and includesthe light emitting chip 110, the wavelength conversion unit 121 and thereflective unit 130 that are closely formed to one another, therebyachieving miniaturization.

FIG. 2 is a sectional view of a light emitting device package accordingto another exemplary embodiment.

A light emitting device package 2 shown in FIG. 2 is generally similarto the light emitting device package 1 described with reference to FIG.1 except that the wavelength conversion unit 123 is not formed on theside surface of the light emitting chip 110. In the followingdescriptions, the different features of the light emitting devicepackage 2 shown in FIG. 2 are mainly discussed.

Referring to FIG. 2, the light emitting device package 2 includes alight emitting chip 110, a wavelength conversion unit 123, and areflective unit 130. The light emitting device package 2 may furtherinclude a lens 150.

The wavelength conversion unit 123 may have a flat bar shape and maycover an upper surface of the light emitting chip 110. Accordingly, thewavelength conversion unit 123 is not formed on a side surface of thelight emitting chip 110, and the reflective unit 130 may directly coverthe side surface of the light emitting chip 110 and may further cover aside surface of the wavelength conversion unit 123. Furthermore, asshown in FIG. 2, the side surface of the wavelength conversion unit 123may be coplanar to the side surface of the light emitting chip 110.

In the light emitting device package 2, the light emitting chip 110, thereflective unit 130 and the lens 150 are similar to those of the lightemitting device package described with reference to FIG. 1, and thusdetailed descriptions thereof will be omitted.

FIG. 3a and FIG. 3b are a sectional view and a plan view of a lightemitting device package according to a further exemplary embodiment.

Referring to FIG. 3a and FIG. 3b , a light emitting device package 3includes a unit light emitting device 10 and a light blocking unit 140.The unit light emitting device 10 includes a light emitting chip 110, awavelength conversion unit 121, and a reflective unit 130.

The light emitting chip 110 includes an upper surface, a side surface, alower surface, and particularly, electrode pads (not shown) disposed onthe lower surface. With the structure wherein the light emitting chip110 includes the electrode pads disposed on the lower surface thereof,the light emitting device package 3 does not need a separate electrodeand the electrode pads can act as electrodes of the light emittingdevice package 3. With this structure, the light emitting device package3 can be miniaturized.

The light emitting chip 110 includes the electrode pads disposed on thelower surface thereof, and may include any type of light emitting diode,for example, a flip-chip type light emitting diode.

The wavelength conversion unit 121 may cover the upper surface of thelight emitting chip 110 and may further cover the side surface of thelight emitting chip 110. The wavelength conversion unit 121 may have aconstant thickness, or may be formed such that an upper surface of thewavelength conversion unit 121 has a different thickness than a sidesurface thereof. Further, the side surfaces of the wavelength conversionunit may differ from each other depending upon the shape or pattern ofthe light emitting chip 110. It is possible to adjust colorcharacteristics of light emitted from the light emitting device packagethrough adjustment of the thickness and the kind of material of thewavelength conversion unit 121.

The wavelength conversion unit 121 may include a phosphor and a resin,in which the phosphor may be mixed with the resin to be randomly orevenly dispersed in the resin. The phosphors included in the wavelengthconversion unit 121 can convert light emitted from the light emittingchip 110 into light having different wavelengths than the light from thelight emitting chip 110. Accordingly, it is possible to realize variousunit light emitting devices 10 emitting various colors, for example, anamber-based unit light emitting device 10, a red color-based unit lightemitting device 10, a green color-based unit light emitting device 10and a white color-based unit light emitting device 10.

The resin may include a polymer resin such as an epoxy resin or an acrylresin, or a silicone resin, and may act as a matrix for dispersing thephosphor therein.

The phosphor can convert light emitted from the light emitting chip 110into light having different wavelengths therefrom through excitation ofthe light. The phosphor may include various phosphors known to a personhaving ordinary knowledge in the art, and may include at least oneamong, for example, garnet phosphors, aluminate phosphors, sulfidephosphors, oxynitride phosphors, nitride phosphors, fluoride phosphors,and silicate phosphors. However, it should be understood that thepresent disclosure is not limited thereto.

The wavelength conversion unit 121 may be formed by depositing a mixtureof the phosphor and the resin so as to cover side surfaces and uppersurfaces of the light emitting chips 110 by printing, dispensing,spraying or the like, followed by curing. However, it should beunderstood that the present invention is not limited thereto and thewavelength conversion unit 121 may be formed by various methods withoutdeparting from the scope of the present invention.

On the other hand, characteristics of the light converted by thewavelength conversion unit 121 can be freely regulated by adjusting thephosphor included in the wavelength conversion unit 121, the thicknessof the wavelength conversion unit 121, the resin in the wavelengthconversion unit 121, and the like.

The reflective unit 130 may cover the side surface of the light emittingchip 110 and may further cover the wavelength conversion unit 121 formedon the side surface of the light emitting chip 110. Thus, the wavelengthconversion unit 121 covering the side surface of the light emitting chip110 may be interposed between the light emitting chip 110 and thereflective unit 130.

The reflective unit 130 serves to reflect light. With the structurewherein the reflective unit 130 is formed on the outer peripheral sidesurface of the light emitting device package 1, the light emittingdevice package allows light emitted through the light emitting chip 110and the phosphor to be collected above the unit light emitting device10. However, it should be understood that the present invention is notlimited thereto, and a directional angle of the light emitted from thelight emitting chip 110 can be regulated by adjusting reflectivity andlight transmittance of the reflective unit 130, as needed.

The reflective unit 130 may include a resin and may further includefillers capable of reflecting or scattering light.

The resin may be a transparent or translucent resin, and may include asilicone resin, or a polymer resin such as an epoxy resin, a polyimideresin, a urethane resin, and the like. In this exemplary embodiment, theresin may be a silicone resin.

The fillers may be uniformly dispersed in the resin. The fillers may beselected from any materials capable of reflecting or scattering light,and may include, for example, titanium dioxide (TiO₂), silicon dioxide(SiO₂), zirconium dioxide (ZrO₂), and the like. The reflective unit 130may include at least one of the above fillers. Reflectivity or a degreeof light scattering of the reflective unit 130 can be regulated byadjusting the kind or concentration of fillers.

The reflective unit 130 may have a constant thickness. The reflectiveunit 130 may have different thicknesses depending upon the location ofthe reflective unit 130 in the light emitting device package.

An upper surface of the reflective unit 130 may have the same height asan upper surface of the wavelength conversion unit 121. That is, asshown in the drawings, the upper surface of the reflective unit 130 maybe flush with the upper surface of the wavelength conversion unit 121.With this structure, the lens (not shown) can be more stably disposed onthe light emitting chip 110.

The reflective unit 130 may be formed in a similar manner as information of the wavelength conversion unit 121, and, after formation ofthe reflective unit 130, at least one of the upper surfaces of thereflective unit 130 and the wavelength conversion unit 121 may besubjected to planarization. Planarization may be performed by grinding,cutting, and the like. When the reflective unit 130 is formed bydeposition, the reflective unit 130 may be formed on the wavelengthconversion unit 121 due to conditions of the manufacturing process.Then, the reflective unit 130 formed on the wavelength conversion unit121 can be removed by planarization, and thus can be prevented frombeing disposed on the light emitting chip 110 in the light emittingdevice package 3.

Further, the wavelength conversion unit 121 may have a side surfacesubjected to plasma treatment. Accordingly, bonding strength between thewavelength conversion unit 121 and the reflective unit 130 increases,thereby improving stability and reliability of the light emitting devicepackage 3.

The unit light emitting device 10 is formed by combination of the lightemitting chip 110, the wavelength conversion unit 121 and the reflectiveunit 130 described above.

The light blocking unit 140 may cover at least one side surface of theunit light emitting device 10. That is, the light blocking unit 140 maycover at least one side surface of the reflective unit 130 included inthe unit light emitting device 10. The light blocking unit 140 and thereflective unit 130 may contact each other. With this structure, thelight blocking unit 140 may be disposed at the outermost periphery ofthe light emitting device 10.

The light blocking unit 140 may serve to absorb light. With thestructure wherein the light blocking unit 140 is formed on the outerperipheral side surface of the light emitting device 10, the lightemitting device package can prevent light leakage from the reflectiveunit 130 to the side surface of the light emitting device 10.Specifically, when light emitted from the light emitting chip 110 leaksto the side surface of the light emitting device 10 through thereflective unit 130, the light blocking unit 140 can block or absorb thelight leaked through the side surface of the unit light emitting device10.

The light blocking unit 140 may be formed of a material having highabsorptivity of light. The light blocking unit 140 may be formed of amaterial having higher absorptivity of light than the reflective unit130. For example, the light blocking unit 140 may be formed of a blackmaterial having high absorptivity of light. As the material for thelight blocking unit 140, any material may be used so long as thematerial has high absorptivity of light and, for example, the lightblocking unit 140 may include a light absorption material, such ascarbon black, a black resin, and a black paint.

The light blocking unit 140 may have a constant thickness. The lightblocking unit 140 may have different thicknesses depending upon thelocation of the light blocking unit 140 in the light emitting devicepackage. The thickness of the light blocking unit 140 is notparticularly limited and may be suitably adjusted depending uponintensity of light emitted through the side surface of the unit lightemitting device 10. Accordingly, the thickness of the light blockingunit 140 may increase with increasing intensity of light emitted throughthe side surface of the reflective unit 130. It should be understoodthat the thickness of the light blocking unit 140 may differ dependingupon the material thereof.

An upper surface of the light blocking unit 140 may have the same heightas the upper surface of the reflective unit 130, or may have a higherheight than the upper surface of the reflective unit 130. The height ofthe light blocking unit 140 is not limited thereto and may be suitablyadjusted by taking into account the intensity of light emitted throughthe side surface of the reflective unit 130.

According to materials in the light blocking unit, the light blockingunit 140 may be formed in a similar manner as in formation of thereflective unit 130 and the wavelength conversion unit 121, or may beformed by other methods such as deposition and film coating. However, itshould be understood that the present invention is not limited theretoand the light blocking unit 140 may be formed by various methods withoutdeparting from the scope of the present invention. The upper surface ofthe light blocking unit 140 may also be subjected to the above-describedplanarization.

FIG. 4 is a sectional view of a light emitting device package accordingto yet another exemplary embodiment.

A light emitting device package 4 shown in FIG. 4 is generally similarto the light emitting device package 3 described with reference to FIG.3a and FIG. 3b except that a lens 150 is disposed on the light emittingchip 110. In the following descriptions, the different features of thelight emitting device package shown in FIG. 4 will be mainly discussed.

A lower surface of the lens 150 may be larger than an upper surface ofthe wavelength conversion unit 121 such that the lens 150 can cover theentirety of the upper surface of the wavelength conversion unit 121.With this structure, the light emitting device package allow lightsubjected to wavelength conversion through the wavelength conversionunit 121 to be more effectively discharged to the outside.

The lens 150 may be a silicone resin and may be formed of any materialwithout limitation. In addition, the lens 150 may have a semi-sphericalshape, as shown in the drawings, or may have other shapes such as aplanar shape and a shape with a concave portion at a center thereof inorder to obtain a desired orientation pattern of light.

The lens 150 may be formed by molding or by various other methods.

The lens 150 may be omitted in order to reduce the overall height of thelight emitting device package.

As described above, the light emitting device package 4 is formedwithout including a separate secondary substrate or a separate leadelectrode, and thus can be miniaturized. In addition, the side surfaceof the unit light emitting device 4 is covered by the light blockingunit 140, thereby preventing light leakage from the light emittingdevice package 4.

FIG. 5 is a sectional view of a light emitting device package accordingto yet another exemplary embodiment.

A light emitting device package 5 shown in FIG. 5 is generally similarto the light emitting device package 3 described with reference to FIG.3a and FIG. 3b except that a wavelength conversion unit 123 is notformed on the side surface of the light emitting chip 110. In thefollowing descriptions, the different features of the light emittingdevice package 5 as shown in FIG. 5 will be mainly discussed.

Referring to FIG. 5, the light emitting device package 5 includes thelight emitting chip 110, the wavelength conversion unit 123, areflective unit 130, and a light blocking unit 140.

The wavelength conversion unit 123 may have a flat bar shape and maycover an upper surface of the light emitting chip 110. Accordingly, thewavelength conversion unit 123 is not formed on a side surface of thelight emitting chip 110, and the reflective unit 130 may directly coverthe side surface of the light emitting chip 110 while further covering aside surface of the wavelength conversion unit 123. Furthermore, asshown in FIG. 5, the side surface of the wavelength conversion unit 123may be coplanar to the side surface of the light emitting chip 110.

In the light emitting device package 5, the light emitting chip 110, thereflective unit 130 and the light blocking unit 140 are similar to thoseof the light emitting device package described with reference to FIG. 3aand FIG. 3b , and thus detailed descriptions thereof will be omitted.

FIG. 6a and FIG. 6b are a sectional view and a plan view of a lightemitting device package and a light emitting chip according to yetanother exemplary embodiment, respectively.

Although a light emitting device package 6 shown in FIG. 6a is generallysimilar to the light emitting device package 1 described with referenceto FIG. 1, the structure of the light emitting chip 110 according tothis exemplary embodiment will be described in more detail withreference to FIG. 6 b.

Next, one example of the light emitting chip 110 will be described inmore detail with reference to FIG. 6 b.

The light emitting chip 110 includes a substrate 21, a firstconductivity-type semiconductor layer 23, mesas M, reflective electrodes30, a current spreading layer 33, a lower insulation layer 31, an upperinsulation layer 35, a first pad 37 a, and a second pad 37 b.

The substrate 21 may be a growth substrate for growth of galliumnitride-based epitaxial layers, and may be, for example, a sapphiresubstrate, a silicon carbide substrate, a silicon substrate, or agallium nitride substrate. The substrate 21 may include a first planeand a second plane facing each other. In this exemplary embodiment, thefirst plane may correspond to a lower surface of the substrate 21, thatis, a surface on which the first conductivity-type semiconductor layer23 is formed, and the second plane may correspond to an upper surface ofthe substrate 21.

The first conductivity-type semiconductor layer 23 is continuouslyformed and includes a plurality of mesas M formed thereon to beseparated from each other. Each of the mesas M includes an active layer25 and a second conductivity-type semiconductor layer 27 and has anelongated shape extending in one direction. Herein, the mesas M have astack structure of gallium nitride-based compound semiconductors. Asshown in FIG. 1, the mesas M may be defined within an upper region ofthe first conductivity-type semiconductor layer 23. Alternatively, asshown in FIG. 6, the mesas M may extend to an edge of an upper surfaceof the first conductivity-type semiconductor layer 23 in one directionto divide the upper surface of the first conductivity-type semiconductorlayer 23 into a plurality of regions. With this structure, the lightemitting chip can relieve current crowding near corners of the mesas M.thereby further improving current spreading performance.

The reflective electrodes 30 are respectively disposed on the pluralityof mesas M to form ohmic contact with a second conductivity-typesemiconductor layer 27. The reflective electrodes 30 may include areflective layer 28 and a barrier layer 29, which may cover an uppersurface and a side surface of the reflective layer 28.

The current spreading layer 33 covers the plurality of mesas M and thefirst conductivity-type semiconductor layer 23. The current spreadinglayer 33 may have openings 33 a each placed within an upper region ofeach of the mesas M and exposing the reflective electrodes 30. Thecurrent spreading layer 33 also forms ohmic contact with the firstconductivity-type semiconductor layer 23 and is insulated from theplurality of mesas M. The current spreading layer 33 may include areflective material such as Al.

The current spreading layer 33 may be insulated from the plurality ofmesas M by the lower insulation layer 31. For example, the lowerinsulation layer 31 may be interposed between the plurality of mesas Mand the current spreading layer 33 to insulate the current spreadinglayer 33 from the plurality of mesas M. Further, the lower insulationlayer 31 may have openings 31 b each placed within the upper region ofeach of the mesas M and exposing the reflective electrodes 30, andopenings 31 a exposing the first conductivity-type semiconductor layer23. The current spreading layer 33 may be connected to the firstconductivity-type semiconductor layer 23 through the openings 31 a. Theopenings 31 b of the lower insulation layer 31 have narrower areas thanthe openings 33 a of the current spreading layer 33 and are completelyexposed through the openings 33 a.

The upper insulation layer 35 covers at least a portion of the currentspreading layer 33. Further, the upper insulation layer 35 may haveopenings 35 b exposing the reflective electrodes 30. Furthermore, theupper insulation layer 35 may have openings 35 a exposing the currentspreading layer 33. The upper insulation layer 35 may cover sidewalls ofthe openings 33 a of the current spreading layer 33.

The first pad 37 a may be disposed on the current spreading layer 33 andmay be connected to the current spreading layer 33 through, for example,the openings 35 a of the upper insulation layer 35. Further, the secondpad 37 b is connected to the reflective electrodes 30 exposed throughthe openings 35 b. Although the first pad 37 a is shown as having thesame size as the second pad 37 b in FIG. 6b , it should be understoodthat the present invention is not limited thereto and the first andsecond pads 37 a and 37 b may have different sizes. For example, thefirst pad 37 a may be larger than the second pad 37 b.

According to the present invention, the current spreading layer 33covers the mesas M and substantially the entire region of the firstconductivity-type semiconductor layer 23 between the mesas M. With thisstructure, the light emitting chip can achieve efficient currentspreading through the current spreading layer 33.

Furthermore, the current spreading layer 23 may include a reflectivemetal layer such as an Al layer or the lower insulation layer may beformed as an insulation reflective layer such that light not reflectedby the reflective electrodes 30 can be reflected by the currentspreading layer 23 or the lower insulation layer 31, thereby improvingextraction efficiency.

The light emitting device package 6 shown in FIG. 6a is generallysimilar to the light emitting device package 1 described with referenceto FIG. 1. However, in the light emitting device package 6 shown in FIG.6a , the wavelength conversion unit 121 may extend to side surfaces ofthe first and second pads 37 a and 37 b, and thus the reflective unit130 may also be formed on outer side surfaces of the first and secondpads 37 a and 37 b.

Each of the light emitting device packages 10, 20 and 30 described withreference to FIG. 1 to FIG. 6b does not include a separate secondarysubstrate or a separate lead electrode, and includes the light emittingchip 110, the wavelength conversion unit 121 and the reflective unit 130formed integrally with each other, thereby achieving miniaturization.

FIG. 7 shows plan views of light emitting device packages according toyet another exemplary embodiment.

Each of light emitting device packages 7 a and 7 b shown in FIG. 7 isgenerally similar to the light emitting device package shown in FIG. 3aand FIG. 3b except that each of the light emitting device packages 7 a,7 b includes a plurality of unit light emitting devices 10.

Referring to FIG. 7(a), the light emitting device package 7 a includessix unit light emitting devices 10, in which one side surface of each ofthe unit light emitting devices 10 adjoins the other side surface ofanother unit light emitting device. Specifically, reflective units 130of the unit light emitting devices 10 may adjoin each other, or onereflective unit 130 may be shared by adjacent unit light emittingdevices 10.

The unit light emitting devices 10 may emit the same color or differentcolors. The unit light emitting devices 10 may be turned on or offsimultaneously or independently.

Referring to FIG. 7(b), the light emitting device package 7 b includessix unit light emitting devices 10 and a light blocking unit 140disposed between the unit light emitting devices 10. Alternatively, thesame structure as that of the light emitting device package 7 b may beformed by continuously connecting six light emitting device packages 3as shown in FIG. 3a and FIG. 3b . The light blocking unit 140 isdisposed between the unit light emitting devices 10, thereby minimizingcolor change due to light leakage of adjacent unit light emittingdevices 10.

The light emitting device packages 7 a and 7 b according to thisexemplary embodiment may be applied to vehicle lamps. Specifically, forexample, the light emitting device package 7 b as shown in FIG. 7(b) maybe used as a taillight of a vehicle. In this case, the light emittingdevice package 7 b may include white color-based unit light emittingdevices 10 and amber-based unit light emitting devices 10 that arealternately arranged. Unlike the light emitting device package 7 a asshown in FIG. 7(a), since the light blocking unit 140 is disposedbetween the unit light emitting devices 10 in the light emitting devicepackage 7 b as shown in FIG. 7(b), it is possible to prevent mixing of awhite color and a yellow color in the reflective unit 130 when the whitecolor-based and amber-based unit light emitting devices 10 aresimultaneously turned on or off.

Although each of the light emitting device packages 7 a and 7 baccording to the exemplary embodiment includes six unit light emittingdevices 10, it should be understood that the present invention is notlimited thereto. Arrangement of the light emitting device packages 7 aand 7 b, or the number or arrangement of unit light emitting devices 10may be suitably adjusted depending upon user purpose as needed.

FIG. 8 shows plan views of a light emitting device package according toyet another exemplary embodiment.

Each of light emitting device packages 8 a and 8 b shown in FIG. 8 isgenerally similar to the light emitting device package shown in FIG. 7except that each of the light emitting device packages 8 a and 8 bincludes a plurality of unit light emitting devices 10 arranged in twolines.

Referring to FIG. 8(a), the light emitting device package 8 a includessix unit light emitting devices 10 arranged in two lines. Specifically,three unit light emitting devices 10 are arranged in an upper row andthree unit light emitting devices 10 are arranged in a lower row. Atleast two side surfaces of the unit light emitting devices 10 may adjoineach other.

The light emitting device packages 8 a and 8 b according to thisexemplary embodiment may be applied to a vehicle lamp. Specifically, forexample, the light emitting device package 8 a as shown in FIG. 8(a) maybe used as a turn signal lamp of a vehicle. In this case, the lightemitting device package may include white color-based unit lightemitting devices 10 and amber-based unit light emitting devices 10 thatare disposed so as not to contact each other. That is, when a whitecolor-based unit light emitting device 10 is disposed at the leftmostside of the upper row, the amber-based unit light emitting device 10 maybe arranged at the right side of and under the white color-based unitlight emitting device 10.

The white color-based unit light emitting devices 10 and the amber-basedunit light emitting devices 10 are alternately turned on or off so as tobe used as the turn signal lamp for vehicles. In this case, only thesame color-based unit light emitting devices 10 are simultaneouslyturned on or off, thereby preventing a problem of color mixing in thereflective unit 130.

Referring to FIG. 8(b), the light emitting device package 8 b includes alight blocking unit 140 disposed between unit light emitting devices 10arranged in two lines. Alternatively, the same structure as that of thelight emitting device package 8 b may be formed by arranging six unitlight emitting devices 10 in two lines. With the structure wherein thelight blocking unit 140 is disposed between the unit light emittingdevices 10, the light emitting device package can minimize color changedue to light leakage of the unit light emitting devices 10.

The light emitting device packages 8 a and 8 b according to thisexemplary embodiment can prevent occurrence of light leakage and thuscan emit light providing a clear cutoff line to an illumination target.Although the vehicle lamp is illustrated by way of example indescription of the above exemplary embodiments, the light emittingdevice packages 8 a and 8 b according to this exemplary embodiment arenot limited thereto and may be used for various purposes as needed.

FIG. 9 is a sectional view and a plan view of a backlight unit includinga light emitting device package according to exemplary embodiments.

Referring to FIG. 9, the backlight unit includes a unit light emittingdevice 10, a printed circuit board 210, support legs 220, and a lens230. The unit light emitting device 10 may be disposed in a centralregion of the lens 230, which is supported by the support legs 220 to beseparated from the printed circuit board 210.

A light blocking unit may be disposed on a side surface of the unitlight emitting device 10 and interposed between a bottom of the lens 230and the printed circuit board to prevent light emitted from the unitlight emitting device 10 from leaking to a region other than the lens.With this structure, it is possible irradiate light as much as possibleto a light incident portion of the lens 230, thereby improving contrastratio and viewing angle of a display.

Although FIG. 9 shows a direct type backlight unit, the light emittingdevice package according to exemplary embodiments is not limited theretoand can also be applied to an edge type backlight unit.

FIG. 10 to FIG. 15 are plan views and a sectional view illustrating amethod for manufacturing a light emitting device package according toone exemplary embodiment. FIG. 10 to FIG. 15 show at least a portion ofa plurality of light emitting chips 110.

Referring to FIG. 10, a wafer 100 is prepared.

The wafer 100 may include a plurality of semiconductor stack structures,which may correspond to light emitting chip regions 110 a. A regionbetween the light emitting chip regions 110 a is defined as a firstisolation region S1.

Each of the plural light emitting chip regions 110 a may be divided intoan individual light emitting chip by subsequent processes, and each ofthe individual light emitting chips includes electrode patterns disposedon a lower surface thereof. For example, one of the light emitting chipregions 110 a may take the form shown in FIG. 6 b.

Next, referring to FIG. 11, the wafer 100 is divided into a plurality ofindividual light emitting chips 110 along the first isolation region S1,and the light emitting chips 110 are arranged on a first supportsubstrate 200 to be separated from each other. Here, the light emittingchips 110 are preferably arranged such that the electrode patterns ofthe light emitting chips 111 face downwards. The light emitting chips110 may be arranged substantially at the same intervals on the firstsupport substrate 200. Accordingly, a wavelength conversion unit 121configured to cover upper surfaces and side surfaces of the lightemitting chips 110 may be formed to have substantially the samethickness at a side surface thereof with respect to all of the lightemitting chips 110 by a subsequent process. As such, the light emittingchips 110 arranged on the first support substrate 200 may be obtainedfrom the same wafer 100.

Next, referring to FIG. 12a , the wavelength conversion unit 121 isformed to cover an upper surface and a side surface of each of the lightemitting chips 110. Here, a region between the light emitting chips 110is defined as a second isolation region S2. FIG. 12b is a sectional viewtaken along line A-A′ of FIG. 12a , and the wavelength conversion unit121 is provided to the upper surfaces of the light emitting chips 110and to a region between the light emitting chips 110 in a shape as shownin FIG. 12 b.

As described above, the wavelength conversion unit 121 may include aresin and a phosphor, and may be formed by depositing a mixture of thephosphor and the resin onto the first support substrate 200, followed bycuring. For example, the mixture of the phosphor and the resin may bedeposited onto the first support substrate 200 so as to cover sidesurfaces and upper surfaces of the light emitting chips 110 by printing,dispensing, spraying, or the like. Then, the mixture is cured by heatcuring or the like, thereby forming the wavelength conversion unit 121.However, it should be understood that the present invention is notlimited thereto and the wavelength conversion unit 121 may be formed byvarious methods without departing from the scope of the presentinvention.

Referring to FIG. 13, the wavelength conversion unit 121 is divided intoa plurality of individual light emitting device units 110 b eachincluding the light emitting chip 110 and the wavelength conversion unit121 along the second isolation region S2, and the individual lightemitting device units 110 b are disposed on a second support substrate300 to be separated from each other. Division of the wavelengthconversion unit 121 may be performed using a metal blade or a laser.

The individual light emitting device units 110 b may be arrangedsubstantially at the same intervals on the second support substrate 300.Accordingly, a reflective unit 130 configured to cover the side surfacesof the light emitting chips 110 may be formed to have substantially thesame thickness at a side surface thereof with respect to all of thelight emitting chips 110 by a subsequent process.

The first support substrate 200 and the second support substrate 300 areprovided as temporary substrates used in the manufacturing process, andthus are not limited to a particular kind of substrate. For example, thefirst support substrate 200 and the second support substrate 300 may beglass substrates.

The method according to this embodiment may further include performingplasma treatment with respect to side surfaces of the individual lightemitting device units 110 b. By plasma treatment, a functional group maybe provided to the side surface of the wavelength conversion unit 121 ofeach of the individual light emitting device units 110 b, therebyimproving bonding strength and adhesion between the wavelengthconversion unit 121 and the reflective unit 130.

Referring to FIG. 14, a reflective unit 130 is formed to fill a regionbetween the individual light emitting device units 110 b on the secondsupport substrate 300. Accordingly, the reflective unit 130 covers theside surfaces of the individual light emitting device units 110 b, thatis, the side surfaces of the light emitting chips 110.

The reflective unit 130 may be formed in a similar manner as information of the wavelength conversion unit 121, and may include a resinand/or fillers, as described above.

The manufacturing method according to this exemplary embodiment mayfurther include performing planarization with respect to at least one ofan upper surface of the reflective unit 130 and an upper surface of thewavelength conversion unit 121 after formation of the reflective unit130. Planarization may be performed by grinding, cutting, or the like.When the reflective unit 130 is formed by deposition, the reflectiveunit 130 can be formed on the wavelength conversion unit 121 due toconditions of the manufacturing process. Since the reflective unit 130formed on the wavelength conversion unit 121 can be removed byplanarization, it is possible to prevent the reflective unit 130 fromresiding on the light emitting chip 110 in a final light emitting devicepackage 1. Furthermore, the upper surface of the wavelength conversionunit 121 can become flush with the upper surface of the reflective unit130 through planarization, whereby a subsequent process for forming alens 150 can be more stably performed.

Then, referring to FIGS. 15(a) and (b), the lens 150 is formed on eachof the individual light emitting device units 110 b and the reflectiveunit 130 is divided into individual light emitting device units 110 calong a third isolation region S3 between the individual light emittingdevice units 110 b.

The lens 150 may be formed by molding, may be disposed on each of theindividual light emitting device units 110 b after being separatelymanufactured, or may be formed by various other methods.

As shown in the drawings, the lens 150 may have a semi-spherical shapeas shown in the drawings, or may have other shapes such as a planarshape and a shape with a concave portion at a center thereof in order toobtain a desired orientation pattern of light. Further, a lower surfaceof the lens 150 may be larger than the size of the individual lightemitting device unit 110 b, and the lens 150 may be formed to cover theentirety of an upper surface of the individual light emitting deviceunit 110 b. In some exemplary embodiments, the lens 150 may be omitted.

The individual light emitting device units 110 c are separated from eachother, thereby providing the light emitting device packages 1 as shownin FIG. 1.

A method for manufacturing a light emitting device package according toanother exemplary embodiment may further include forming a lightblocking unit 140 covering at least one side surface of each of theindividual unit light emitting devices before forming the lens 150.

Referring to FIG. 16(a), the individual light emitting device unitshaving the reflective unit 130 formed thereon are disposed on a separatesupport substrate to be separated from each other, and then a lightblocking unit 140 is formed to fill a space between the individual lightemitting device units. Here, it is possible to determine the thicknessof the side surface of the light blocking unit 140 in the light emittingdevice package by adjusting the distance between the individual lightemitting device units.

The light blocking unit 140 may be formed of a material having highabsorptivity of light. The light blocking unit 140 may be formed of amaterial having higher absorptivity of light than the reflective unit130. For example, the light blocking unit 140 may be formed of a blackmaterial having high absorptivity of light. As the material for thelight blocking unit 140, any material may be used so long as thematerial has high absorptivity of light and, for example, the lightblocking unit 140 may include a light absorption material, such ascarbon black, a black resin, and a black paint.

The light blocking unit 140 may be formed by various methods such ascoating and curing, deposition and curing, and the like. In addition, anupper surface of the light blocking unit 140 may be formed to have thesame height as the upper surface of the reflective unit 130, and, forexample, the upper surface of the light blocking unit 140 may becomeflush with the upper surface of the reflective unit 130 byplanarization. However, it should be understood that the presentinvention is not limited thereto, and the upper surface of the lightblocking unit 140 is not necessarily be formed to be flush with theupper surface of the reflective unit 130.

Next, referring to FIG. 16(b), the light blocking unit 140 is dividedalong a fourth isolation region S4 between the individual light emittingunits, thereby providing light emitting device packages 5 as shown inFIG. 5.

Further, when the lens 150 is further formed on each of the individuallight emitting device units before division of the light blocking unit140, light emitting device packages 6 as shown in FIG. 4 can also beprovided.

FIG. 17 to FIG. 21 are plan views and a sectional view illustrating amethod for manufacturing a light emitting device package according to afurther exemplary embodiment. FIG. 17 to FIG. 21 show at least a portionof a plurality of light emitting chips 110.

The method according to this exemplary embodiment is generally similarto the method described with reference to FIG. 10 to FIG. 15 exceptthat, in this method, a wavelength conversion unit 123 is formed on awafer 100 before division of the wafer 100. The following descriptionwill be mainly given of different features of the method according tothis exemplary embodiment.

Referring to FIG. 17, a wafer 100 as shown in FIG. 10 is prepared. Here,each of light emitting chip regions 110 a may have electrode patternsdisposed on a lower surface of the wafer 100.

Referring to FIG. 18, a wavelength conversion unit 123 is formed tocover an upper surface of the wafer 100. That is, in the above exemplaryembodiment shown in FIG. 10 to FIG. 15, the wavelength conversion unit121 is formed after division of the wafer 100 along the first isolationregion S1, whereas the wavelength conversion unit 123 is formed beforedivision of the wafer 100 in this exemplary embodiment. The wavelengthconversion unit 123 may be formed in a similar manner as in the methoddescribed in the above exemplary embodiments.

Next, referring to FIG. 19a , the wafer 100 is divided into a pluralityof individual light emitting device units 110 d along a first isolationregion S1, and the light emitting device units 110 d are arranged on afirst support substrate 200 to be separated from each other. Theindividual light emitting device units 110 d may be light emitting chips110 having a wavelength conversion unit 123 formed thereon. FIG. 19b isa sectional view taken along line B-B′ of FIG. 19 a.

Since the wavelength conversion unit 123 is divided and separatedtogether with the wafer 100, a side surface of each light emitting chip110 may be coplanar to the side surface of the wavelength conversionunit 123 in the individual light emitting device unit 110 d. Further,the wavelength conversion unit 123 may have a flat bar shape.

Then, referring to FIG. 20 and FIG. 21, a reflective unit 130 is formedto fill a space between the individual light emitting device units 110d, and a lens 150 is formed on each of the light emitting chips 110,followed by dividing the reflective unit 130 along a fourth isolationregion S4 to provide individual light emitting device units 110 e. As aresult, a plurality of light emitting device packages 2 as shown in FIG.2 is provided.

The processes of forming the reflective unit 130 and the lens 150 andthe process of dividing the reflective unit 130 are substantiallysimilar to the processes described with reference to FIG. 10 to FIG. 15,and detailed descriptions thereof will be omitted.

According to this exemplary embodiment, a plurality of miniaturizedlight emitting device packages can be provided by forming the wavelengthconversion unit 121 or 123 and the reflective unit 130 with respect to aplurality of light emitting chips at a wafer level, followed bydividing. Accordingly, a separate packaging process can be omitted and aplurality of light emitting chips is packaged by a single packagingprocess, thereby enabling simplification of the process of manufacturinga light emitting device package. Furthermore, since a separate substratefor formation of the lens can be omitted by directly forming the lens onthe reflective unit 130, it is possible to manufacture a miniaturizedlight emitting device package through the manufacturing method asdescribed above.

It should be understood that the present invention is not limited to theexemplary embodiments and features described above and that variousmodification, variations, and alterations can be made without departingfrom the spirit and scope of the present invention.

1. A light emitting device package comprising: a first light emittingdevice; and a second light emitting device, wherein each of the firstlight emitting device and the second light emitting device includes: alight emitting chip having an upper surface, a side surface and a lowersurface; a wavelength conversion unit covering the upper surface of thelight emitting chip; and a reflective unit covering the side surface ofthe light emitting chip, and wherein the light emitting chip includeselectrode pads disposed on the lower surface of the light emitting chipand exposed on an outside surface of the light emitting chip, andwherein the first light emitting device and the second light emittingdevice emit at least two of a white colored light, an amber-basedcolored light, a red-based colored light, or a green-based coloredlight.
 2. A vehicle lamp comprising: a light emitting device packagecomprising a first light emitting device and a second light emittingdevice, and wherein each of the first light emitting device and thesecond light emitting device includes: a light emitting chip having anupper surface, a side surface and a lower surface; a wavelengthconversion unit covering the upper surface of the light emitting chip;and a reflective unit covering the side surface of the light emittingchip, and wherein the light emitting chip includes electrode padsdisposed on the lower surface of the light emitting chip and exposed onan outside surface of the light emitting chip, wherein the first lightemitting device and the second light emitting device emit at least twoof a white colored light, an amber-based colored light, a red-basedcolored light, or a green-based colored light, and wherein the firstlight emitting device emits the white-based colored light and the secondlight emitting device emits the amber-based colored light.
 3. Thevehicle lamp of claim 2, wherein the first light emitting device and thesecond light emitting device are not simultaneously turned on or off. 4.The vehicle lamp of claim 3, wherein the light emitting device packagefurther comprises a wavelength conversion unit covering the side surfaceof the light emitting chip and disposed between the reflective unit andthe light emitting chip.
 5. The vehicle lamp of claim 4, wherein thewavelength conversion unit includes at least one of a phosphor or aresin and has a side surface subjected to plasma treatment.
 6. Thevehicle lamp of claim 3, wherein the light emitting device packagefurther comprises a light blocking unit covering a side surface of thelight emitting device package.
 7. The vehicle lamp of claim 6, whereinthe light blocking unit includes a light absorption material absorbinglight better than the reflective unit, and the light absorption materialincludes carbon black, a black resin, and a black paint.
 8. The vehiclelamp of claim 6, wherein an upper surface of the light blocking unit isflush with or a higher than an upper surface of the reflective unit. 9.The vehicle lamp of claim 4, wherein an upper surface of the wavelengthconversion unit is flush with an upper surface of the reflective unit.10. The vehicle lamp of claim 3, wherein the light emitting chipcomprising; a first conductivity type semiconductor layer; a mesa formedon the first conductivity type semiconductor layer; reflectiveelectrodes disposed on the mesa; a current spreading layer covering thefirst conductivity type semiconductor layer and the mesa; a lowerinsulation layer interposed between the mesa and the current spreadinglayer; and an upper insulation layer covering at least a portion of thecurrent spreading layer and including openings, the reflectiveelectrodes exposed through the openings.
 11. The vehicle lamp of claim10, the light emitting chip further comprises a growth substrate. 12.The vehicle lamp of claim 2, further comprising an additional firstlight emitting device and an additional second light emitting device.13. The vehicle lamp of claim 12, wherein the first light emittingdevice, the second light emitting device, the additional first lightemitting device, and the additional second light emitting device arearranged in multiple lines.
 14. The vehicle lamp of claim 2, wherein thefirst light emitting device and the second light emitting device arealternately arranged.
 15. The vehicle lamp of claim 2, wherein the firstlight emitting device and the second light emitting device are disposedapart from each other.
 16. The vehicle lamp of claim 2, wherein thefirst light emitting device and the second light emitting device provideturn signal lights for a vehicle.